Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment
| Autor: | X. Q. Wang, Ning Zhang, Weikun Ge, Xiang Ning Kang, Xiaoyang Yang, Jing Lang, J. Wang, X. Z. Fang, Zelian Qin, Fujun Xu, Luojia Wang, Bing Shen, Baodong Liu |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Plasma etching Materials science Physics and Astronomy (miscellaneous) fungi Fermi level Analytical chemistry 02 engineering and technology Plasma Active surface 021001 nanoscience & nanotechnology 01 natural sciences Metal symbols.namesake visual_art 0103 physical sciences visual_art.visual_art_medium symbols 0210 nano-technology Conduction band Ohmic contact |
| Zdroj: | Applied Physics Letters. 118:222101 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/5.0042621 |
| Popis: | Improving the contact characteristics of Ti/Al/Ni/Au on plasma etched n-AlGaN has been attempted by an active pretreatment, which can provide Si and N atoms to occupy the possible metal and N vacancies. It is found that the contacts on both the as-grown and plasma-etched + pretreatment n-Al0.5Ga0.5N present truly Ohmic in nature, whereas the contacts on plasma-etched samples without pretreatment still remain rectifying. Surface atomic concentration analysis indicates that the plasma etching induced N or metal vacancies mostly act as acceptor-like states, leading to a severe compensation. Fortunately, these states can be effectively removed by the presently proposed pretreatment, and thus the Fermi level is raised up toward the conduction band edge, ensuring the formation of Ohmic contacts. |
| Databáze: | OpenAIRE |
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