Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2 Gate-Insulator and Zr-Based Ohmic Contacts
| Autor: | Seongmo Hwang, Grigory Simin, Asif Khan, Kamal Hussain, Fatima Asif, Shahab Mollah, Xuhong Hu, Richard Floyd |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Doping Contact resistance 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Omega Electronic Optical and Magnetic Materials Threshold voltage Stack (abstract data type) Plasma-enhanced chemical vapor deposition Saturation current 0103 physical sciences Electrical and Electronic Engineering 0210 nano-technology Ohmic contact |
| Zdroj: | IEEE Electron Device Letters. 39:1568-1571 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2018.2866027 |
| Popis: | This letter reports an Al0.65Ga0.35N-Al0.4Ga0.6N metal–oxide–semiconductor–heterojunction–field–effect–transistor (MOSHFET) with an SiO2 gate-insulator. For this first demonstration of an AlGaN channel MOSHFET, a new doped barrier epilayer design led to linear source–drain ohmic-contacts formed by Zr-based metal stack with a contact resistance as low as $1.64~\Omega \cdot \textsf {mm}$ . For a device with 6- $\mu \text{m}$ source–drain opening a record saturation current of 0.6 A/mm (at gate bias of 6V) was measured. In contrast to a conventional Schottky-gate HFET, the gate-oxide from the pulsed plasma enhanced chemical vapor deposition decreased the MOSHFET gate leakage current by a factor of 104 with only a 1.5-V shift in the threshold voltage. A drift mobility of 430 cm $^{2}/\textsf {V}\cdot \textsf {s}$ is measured at zero-gate bias, which increases to 800 cm $^{2}/\textsf {V}\cdot \textsf {s}$ close to the threshold voltage. The device characteristics up to 250°C are used to calculate the temperature dependence of the drift mobility. |
| Databáze: | OpenAIRE |
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