Autor: |
Gil Chung, Robert Viveros, Charles Lee, Andrey Soukhojak, Vladimir Pushkarev, Qian Yu Cheng, Balaji Raghothamachar, Michael Dudley |
Rok vydání: |
2023 |
Předmět: |
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Zdroj: |
Defect and Diffusion Forum. 425:51-56 |
ISSN: |
1662-9507 |
DOI: |
10.4028/p-35058b |
Popis: |
Correlation of X-ray topography and production line defect inspection tools has demonstrated the capability of in-line tools to differentiate between geometrically comparable basal plane slip bands (BPSB) and bar stacking faults (BSF) on 4H SiC wafers. BPSBs were found to propagate through epitaxial growth at high rates and with similar photoluminescence signatures to post-epitaxy BSFs. Molten KOH etching post-epitaxy provided evidence of distinguishing features between BPSBs and BSFs, suggesting that the defects were indeed correctly identified by in-line defect inspection tools pre-epitaxy. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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