Development of Cu2NiSnS4 based thin film solar cells without a sulfurization step
| Autor: | Abdelkader Outzourhit, H. Ait Dads, M. Elyaagoubi, D. Ait elhaj, F. Welatta, L. Nkhaili, A. El Kissani, H. Chaib |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) Scanning electron microscope Mechanical Engineering Analytical chemistry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Copper symbols.namesake Nickel chemistry Mechanics of Materials 0103 physical sciences symbols General Materials Science Thin film 0210 nano-technology Raman spectroscopy Stoichiometry Sheet resistance |
| Zdroj: | Materials Science in Semiconductor Processing. 107:104811 |
| ISSN: | 1369-8001 |
| Popis: | Copper nickel tin sulfide thin films were prepared by a low-cost and facile route, using spin-coating deposition technique without a sulfurization step. X-ray diffraction, Raman spectroscopy, scanning electron microscopy, energy dispersive analysis, and Hall-effect measurements were used to analyze the influence of the annealing temperature on the structural, morphological, compositional, optical and electrical properties of the deposited thin films. After annealing at 300 °C in a nitrogen atmosphere for 1 h, the prepared thin films exhibit a pure cubic structure, good morphology without any cracks, and are nearly stoichiometric. The films showed a p-type conductivity with a sheet carrier concentration of 4.5 1017cm−3, a sheet resistivity of ~ 0.4 Ω cm and a Hall mobility of ~ 3 cm2/V.s. On the other hand, optical transmittance measurements of the annealed films revealed an optical gap of 1.35 eV and an absorption coefficient greater than 104 cm−1. These results suggest that the annealed copper nickel tin sulfide thin films at these relatively low temperatures (300 °C) in a nitrogen atmosphere for 1 h are very suitable for low-cost photovoltaic applications. |
| Databáze: | OpenAIRE |
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