Incorporation and stability of carbon during low-temperature epitaxial growth of Ge1−xCx (x<0.1) alloys on Si(100): Microstructural and Raman studies
| Autor: | W. H. Weber, M. Krishnamurthy, B.-K. Yang |
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| Rok vydání: | 1997 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 82:3287-3296 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.365636 |
| Popis: | Low-temperature (∼200 °C) molecular beam epitaxy of Ge1−xCx alloys grown on Si(100) have been extensively investigated by in situ reflection high-energy electron diffraction, ex situ x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Carbon concentrations were nominally varied from 0 up to ∼10 at. %. Selected samples were annealed in an Ar ambient at 750 °C to evaluate the stability of the thin films. A few films were also grown on Ge substrates. With increasing C concentration, the epitaxial growth mode changes from two dimensional layer growth to three dimensional island growth. The surface has a tendency to facet along {311} planes under certain growth conditions. The microstructure shows an increase in planar defect density with increasing C concentration. The x-ray diffraction data show that the lattice parameter decreases with increasing C concentration and that a maximum of 1 at. % C is incorporated substitutionally in Ge. Raman spectroscopy shows no clear Ge–C signal thou... |
| Databáze: | OpenAIRE |
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