MBE growth and processing of diluted nitride quantum well lasers on GaAs (111)B

Autor:	Javier Miguel-Sánchez, Adrian Hierro, E. Muñoz, M. Montes, JM José Maria Ulloa, A. Guzmán
Rok vydání:	2006
Předmět:	Photoluminescence Materials science Laser diode business.industry General Engineering Physics::Optics Nitride Laser law.invention Condensed Matter::Materials Science Optics law Optoelectronics Growth rate business Quantum well Diode Molecular beam epitaxy
Zdroj:	Microelectronics Journal. 37:1442-1445
ISSN:	0026-2692
DOI:	10.1016/j.mejo.2006.05.005
Popis:	We have grown by Molecular Beam Epitaxy GaInNAs/GaAs (111)B quantum wells (QWs) embedded in p-i-n diode and laser diode structures. The impact of the different growth parameters (As flux, growth temperature, growth rate, ion density) on the optical and structural properties of this material is studied by Photoluminescence and Atomic Force Microscopy. Additionally, systematic studies of rapid thermal annealing cycles have been performed to optimize the laser structures. Finally, edge-emitting laser diodes have been processed using these structures. These devices showed room-temperature laser emission above [email protected] under pulsed current conditions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8c7e10d6b262d7572def9e34f090803b https://doi.org/10.1016/j.mejo.2006.05.005 Zobrazit plný text záznamu Full Text from ScienceDirect