Deposition of silicon carbon nitride thin films by microwave ECR plasma enhanced unbalance magnetron sputtering
| Autor: | Jun Xu, Wanyu Ding, Peng Gao, Chuang Dong, Dehe Wang, Yong Piao, Xin-Lu Deng |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Analytical chemistry Surfaces and Interfaces General Chemistry Nitride Sputter deposition Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound Carbon film chemistry Sputtering Physical vapor deposition Materials Chemistry Graphite Thin film Carbon nitride |
| Zdroj: | Surface and Coatings Technology. 201:5298-5301 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/j.surfcoat.2006.07.197 |
| Popis: | Silicon carbon nitride thin films were prepared by microwave ECR plasma enhanced unbalanced magnetron sputtering. Chemical structure, mechanical and optical properties of the films as a function of graphite target voltage has been studied. The chemical structure in the deposited film is investigated with Fourier transform infrared spectroscopy (FTIR). The Si–C–N bonds increased from 17.14% to 23.56% while the graphite target voltage changed from 450 V to 650 V. The composition of SiCN thin films was analyzed by X-ray photoemission spectroscopy (XPS). The optical property was measured with UV–visible spectrophotometer. It was found that the transmittance of SiCN thin films decreases with the increasing carbon content; the optical gap value progressively decreases from 2.65 to 1.95 eV as the carbon content changes from 19.7% to 26.4%. The hardness of the thin films has been studied by nano-indentation, it increased with the graphite target voltage. The maximum hardness of the thin films reaches 25 GPa. |
| Databáze: | OpenAIRE |
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