Integration of Low Temperature 480℃ SiOCN as Offset Spacer in view of 3D Sequential Integration

Autor: A. Michallet, C. Bout, J. Fort, T. Skotnicki, V. Beugin, F. Pierre, D. Benoit, L. Brunet, P. Besson, C. Arvet, M.-P. Samson, C. Tabone, N. Rochat, C.-M. V. Lu, V. Loup, Perrine Batude, C. Fenouillet-Beranger, N. Posseme, Bernard Previtali, A. Roule, M Vinet
Rok vydání: 2016
Předmět:
Zdroj: Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
DOI: 10.7567/ssdm.2016.ps-1-07
Databáze: OpenAIRE