Damascene tungsten process for local interconnects with improved reliability performance

Autor:	T. Krywanczyk, D. Sturtevant, R. Phelps, C. Sanetra, J. Chapple-Sokel
Rok vydání:	2004
Předmět:	Yield (engineering) Materials science business.industry Copper interconnect chemistry.chemical_element Chemical vapor deposition Tungsten Stress (mechanics) Reliability (semiconductor) chemistry Chemical-mechanical planarization Electronic engineering Microelectronics Optoelectronics business
Zdroj:	2004 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (IEEE Cat. No.04CH37530).
DOI:	10.1109/asmc.2004.1309617
Popis:	Improved functional reliability is demonstrated through implementation of a tungsten damascene process for creating local interconnects that results in a cleaner, more planar surface. Reduction in lateral shorts is posited as the driver for the substantial reduction in yield loss and failure following stress conditions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8c6ea6714ef57c25c66859b83dd856d5 https://doi.org/10.1109/asmc.2004.1309617 Zobrazit plný text záznamu