Growth of semi-insulating InGaAsP alloys using low-pressure MOCVD
| Autor: | D.G. Knight, W.T. Moore, R.A. Bruce |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Doping
Alloy Analytical chemistry chemistry.chemical_element engineering.material Condensed Matter Physics Mole fraction Inorganic Chemistry chemistry.chemical_compound chemistry Electrical resistivity and conductivity Materials Chemistry engineering Metalorganic vapour phase epitaxy Solubility Arsenic Indium gallium arsenide |
| Zdroj: | Journal of Crystal Growth. 124:352-357 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(92)90483-y |
| Popis: | Semi-insulating Fe-doped InGaAsP alloys of λ = 1.0, 1.15, 1.35 and 1.55 μm wavelength compositions lattice matched to InP have been grown and characterized for the first time. The resistivity is maximum for λ = 1.0 μm InGaAsP at a value of 1×10 8 ω cm, and decreases exponentially with the arsenic mole fraction for the longer wavelength alloys. The solubility of Fe in the InGaAsP is fixed at the InP solubility value of 5×10 16 cm −3 at 630°C until phosphorus is eliminated from the alloy lattice. Diffusion of Fe in InGaAsP is noted, where the diffusion tendency increases with the arsenic mole fraction. Limiting the total Fe concentration to the solubility limit of Fe in InGaAsP greatly reduces diffusion of Fe. |
| Databáze: | OpenAIRE |
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