| Autor: |
Andrew J. Ritenour, Shannon W. Boettcher |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
2012 38th IEEE Photovoltaic Specialists Conference. |
| DOI: |
10.1109/pvsc.2012.6317751 |
| Popis: |
GaAs is an attractive photovoltaic material, but its widespread implementation is limited in part by the high cost of metal-organic chemical vapor deposition, which employs toxic and pyrophoric gas-phase precursors. We study close-space vapor transport, which uses solid GaAs as a source and water vapor as a transport agent as an alternative technique for depositing GaAs films. Epitaxial n-GaAs thin films were grown on n+-GaAs substrates while varying the water vapor concentration and the source/substrate temperatures. The photovoltaic properties of the films were evaluated using a non-aqueous photoelectrochemical test cell containing the ferrocene/ferrocenium redox couple. We found that a wide range of growth conditions were suitable for growing GaAs films with diffusion lengths over 1 µm and open circuit voltages similar to what has been observed for GaAs grown using metal-organic chemical vapor deposition (∼ 820 mV). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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