Patterned deposition of thin SiOX-films by laser induced forward transfer
| Autor: | J. Ihlemann, R. Weichenhain-Schriever |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Suboxide
Materials science Silicon medicine.medical_treatment chemistry.chemical_element Substrate (electronics) engineering.material Vacuum evaporation law.invention Optics Coating law Materials Chemistry medicine Thin film Excimer laser business.industry Metals and Alloys Surfaces and Interfaces Laser Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry engineering Optoelectronics business |
| Zdroj: | Thin Solid Films. 550:521-524 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2013.10.128 |
| Popis: | Well defined regions of silicon suboxide (SiOx) thin films deposited on fused silica substrates by vacuum evaporation are transferred to a receiver substrate by pulsed laser induced forward transfer. The receiver substrate (fused silica, polycarbonate or polydimethylsiloxane) is pressed against the coated donor substrate, and the SiOx (x ≈ 1) coating is irradiated through the donor substrate with a single excimer laser pulse. The irradiated area is defined by the projection of a mask, which is illuminated by the laser. Films with thickness ranging from 200 nm to 800 nm have been transferred this way. The process is a congruent transfer, i.e. the shape of the deposited film pad corresponds exactly to the ablated film area defined by the mask. Accurate edges without melt rims can be obtained at a laser fluence of about 500 mJ/cm2. |
| Databáze: | OpenAIRE |
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