Photoresist Lifting Induced Oxide Bridge Defects
| Autor: | David Anderson, Wei Xia, Felix Lin, Eric Ellis, Shazad Paracha, Jonathan Cohrs, Dip Mahato |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry Oxide 02 engineering and technology Photoresist 021001 nanoscience & nanotechnology 01 natural sciences Bridge (interpersonal) Die (integrated circuit) 010309 optics chemistry.chemical_compound Back end of line chemistry 0103 physical sciences Optoelectronics Wafer 0210 nano-technology business |
| Zdroj: | 2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). |
| DOI: | 10.1109/asmc.2019.8791766 |
| Popis: | Oxide Bridge (OX BG) with wafer center signature was found in the back-end-of-line (BEOL) section of IC fabrication. The defect resembled lifted photoresist (PR) pattern and was uncovered to be related with the weak points at the scribe lines surrounding the active die area. The PR lifting OX BG was significantly reduced through optimizing the focus margin as well as fixing the weak points at the scribe lines. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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