Electro-Deposition of Thin Si and Ge Films Based on Ballistic Hot Electron Injection
| Autor: | Jun-ichi Shirakashi, Nobuyoshi Koshida, Toshiyuki Ohta, Romain Mentek, Nobuya Mori, Bernard Gelloz, Akira Kojima |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Anodizing Nanocrystalline silicon Analytical chemistry Chemical vapor deposition Electrolyte Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Chemical engineering Ionic liquid Deposition (phase transition) Electrical and Electronic Engineering Molten salt Layer (electronics) |
| Zdroj: | ECS Solid State Letters. 3:P57-P60 |
| ISSN: | 2162-8750 2162-8742 |
| Popis: | Apart from the conventional dry process such as chemical vapor deposition (CVD), some electrochemical approaches have been conducted to fabricate thin Si and Ge films. The liquids used to date for electro-deposition of those films are nonaqueous organic electrolytes, 1‐4 tetrachloride solutions (SiCl4, GeCl4), 5,6 ionic liquids, 7‐13 aqueous solutions, 14 and molten salt solutions. 15‐17 In every case, however, deposited films show non-uniform, porous, or contaminant features in structure and composition. Nanocrystalline silicon (nc-Si) diode acts as a planar cold cathode which uniformly emits ballistic hot electrons. 18 The nc-Si emitter is composed of a thin Au (10 nm), an anodized nc-Si layer (∼1 μm), a |
| Databáze: | OpenAIRE |
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