Terahertz Channel Characterization using a Silicon-based Picosecond Pulse Source
| Autor: | Aydin Babakhani, Mostafa Hosseini, M. Mahdi Assefzadeh, Yash Mehta, Sam Razavian |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon business.industry Terahertz radiation Parabolic reflector chemistry.chemical_element 02 engineering and technology Plane mirror 021001 nanoscience & nanotechnology Chip 01 natural sciences 010309 optics Frequency comb Optics chemistry 0103 physical sciences Specular reflection 0210 nano-technology business Communication channel |
| Zdroj: | RWS |
| DOI: | 10.1109/rws45077.2020.9050123 |
| Popis: | In this work, a long-path Terahertz (THz) communication channel is characterized between 0.32-1.1 THz using a custom-designed silicon-based THz pulse radiator chip. Our chip generates and radiates 1.9 ps pulses with an on-chip antenna at a repetition rate of 5.2 GHz, resulting in a broadband 0.1-1.1 THz frequency comb. A specular non-lineof-sight link was created using the impulse radiator, parabolic reflector antennas, a plane mirror, and a downconverting mixer. The THz channel was characterized up to a distance of 113 m. The measurement results demonstrate channel path loss, atmospheric absorption, and low-loss frequency windows suitable for wireless links in this range. To the best of authors’ knowledge, this is the first time a custom lowpower silicon-based radiator has been used as the source in channel characterization at THz frequencies. |
| Databáze: | OpenAIRE |
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