| Popis: |
This article mainly focuses on the typical implementation of Group III-V compound materials at the source region of a dual gate tri-metal n-type tunnel field effect transistor (DG-TM-TGNFET). Based on the carrier mobility and energy band gap, the different III-V materials have been employed. Moreover, the proposed tunnel FET device model with 20 nm effective gate length, has been incorporated with graphene nanoribbon laid over ultra-thin silicon channel. The implementation of various III-V material at source with Silicon at channel makes our device model heterostructure, which further results 349 GHz cut off frequency at 0.5V supply voltage, endorses better RF performance. Silvaco TCAD has been used to simulate the device models. |
