| Autor: |
John J. Ellis-Monaghan, James A. Slinkman, Michel J. Abou-Khalil, Steven M. Shank, Richard A. Phelps, Zhong-Xiang He, Jeff Gross, Jeffrey P. Gambino, Mark D. Jaffe, Randy L. Wolf, Alan B. Botula, Alvin J. Joseph |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. |
| DOI: |
10.1109/sirf.2015.7119865 |
| Popis: |
Over the past few years, CMOS Silicon-oninsulator (SOI) has emerged as the dominant technology for RF switches in RF front end modules for cell phones and WiFi. RF SOI technologies were created from silicon processes originally used for high speed logic applications, but the technology was modified to meet the performance needs of RF switches. The RF SOI technologies have been improved to follow the evolving system requirements for insertion loss, isolation, voltage tolerance, linearity, integration and cost. In this paper, the performance results of the latest generations of RF SOI switch technologies from IBM are reviewed and technology elements that contribute to improved performance are discussed. Future improvements are also discussed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
