Growth Kinetics and Electrical Properties of Ultrathin Silicon Dioxide Layers

Autor:	Hisham Z. Massoud
Rok vydání:	2006
Předmět:	Silicon Dopant Silicon dioxide business.industry Oxide chemistry.chemical_element Substrate (electronics) chemistry.chemical_compound chemistry Ellipsometry MOSFET Electronic engineering Optoelectronics business Volta potential
Zdroj:	ECS Transactions. 2:189-203
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2195659
Popis:	In this paper, the growth kinetics and electrical properties of ultrathin silicon-dioxide layers are reviewed. Topics discussed here include the onset of oxide growth, the effects of temperature, substrate orientation, dopant type and concentration, and stress on oxide growth kinetics. The use of in situ real-time ellipsometry to control the rapid- thermal oxidation of silicon will be presented. The electrical properties of the ultrathin silicon-dioxide layers will be discussed, especially the contact potential difference in MOS devices and its dependence on the processing history and substrate orientation which will be explained in terms of the role of partial-charge-transfer dipoles at the oxide/silicon interface. Finally, gate tunneling considerations in MOSFET design, modeling, characterization, and circuit performance will be briefly presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8c0fe4d138be9ba79e54be9fc6bfdaf2 https://doi.org/10.1149/1.2195659 Zobrazit plný text záznamu