Epitaxial growth mechanism of high-crystallinity lanthanum hexaboride (001) thin films on silicon (001) by electron beam deposition

Autor:	Furuhata Naoki, Hai Dang Ngo, Tung Anh Doan, Ramu Pasupathi Sugavaneshwar, Tadaaki Nagao, Ørjan S. Handegård, Shigeki Otani
Rok vydání:	2020
Předmět:	Materials science Silicon business.industry General Engineering General Physics and Astronomy chemistry.chemical_element Crystal growth Lanthanum hexaboride Epitaxy chemistry.chemical_compound Crystallinity chemistry Electron beam deposition Optoelectronics Thin film business
Zdroj:	Applied Physics Express. 13:055504
ISSN:	1882-0786 1882-0778
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8c02776deee9d56b5bfa48205e809d8d https://doi.org/10.35848/1882-0786/ab8728 Zobrazit plný text záznamu