Study of silicide contacts to SiGe source/drain
| Autor: | Christa Vrancken, M.J.H. van Dal, Peter Verheyen, Jorge A. Kittl, Anne Lauwers, K. Funk, Sofie Mertens, K. Verheyden, O. Chamirian, Caroline Demeurisse |
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| Rok vydání: | 2006 |
| Předmět: |
Diffraction
Materials science Annealing (metallurgy) Scanning electron microscope Analytical chemistry Condensed Matter Physics Atomic and Molecular Physics and Optics Isothermal process Phase formation Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Silicide Thermal stability Electrical and Electronic Engineering Sheet resistance |
| Zdroj: | Microelectronic Engineering. 83:2268-2271 |
| ISSN: | 0167-9317 |
| Popis: | NiPt (10% Pt) and Pt were investigated as alternatives to Ni for contact formation to SiGe source/drain. The germanosilicide phase formation and morphology were studied by means of sheet resistance measurements, XRD (X-ray diffraction) analysis and SEM (scanning electron microscopy) inspection. From isochronal and isothermal anneals it is found that NiPt- and Pt-germanosilicide have better thermal stability compared to Ni-germanosilicide. NiPt-germanosilicide degrades morphologically, while still in the monogermanosilicide phase. |
| Databáze: | OpenAIRE |
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