Mechanism of positive charge generation in the bulk of HfAlO/SiO2 stack
| Autor: | Yao-Jen Lee, Chin-Lung Cheng, Piyas Samanta, Mansun Chan |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Condensed matter physics
Chemistry chemistry.chemical_element Equivalent oxide thickness Dielectric Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Anode Hafnium law.invention Tunnel effect Capacitor Stack (abstract data type) law Proton transport Electrical and Electronic Engineering |
| Zdroj: | Microelectronic Engineering. 86:1767-1770 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2009.03.002 |
| Popis: | We have investigated electrical stress-induced positive charge buildup in a hafnium aluminate (HfAlO)/silicon dioxide (SiO"2) dielectric stack (equivalent oxide thickness=2.63nm) in metal-oxide-semiconductor (MOS) capacitor structures with negative bias on the TaN gate. Various mechanisms of positive charge generation in the dielectric have been theoretically studied. Although, anode hole injection (AHI) and valence band hole tunneling are energetically favorable in the stress voltage range studied, the measurement results can be best explained by the dispersive proton transport model. |
| Databáze: | OpenAIRE |
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