Transport Properties of 3D Vertically Stacked SiGe and SiGeC Nanowires

Autor:	Irina Ionica, Emeline Saracco, Sorin Cristoloveanu, Caroline Bonafos, Jean-Francois Damlencourt, A. Diab
Rok vydání:	2011
Předmět:	Nanostructure Materials science Fabrication business.industry Transistor Nanowire chemistry.chemical_element Germanium Substrate (electronics) Electron law.invention chemistry law Optoelectronics Microelectronics business
Zdroj:	ECS Transactions. 35:157-162
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3570791
Popis:	One of the trends in microelectronics is to explore nanowire gate-all-around structures and alternative channel materials with interesting electrical transport properties. We present the electrical transport in three-dimensional vertically stacked germanium-enriched nanowires. Two starting materials have been used for the nanowire fabrication: SiGe and SiGeC. Measurements show that the transport in the nanowires is controlled by the voltage applied on the substrate, as in a metal-oxide-semiconductor field effect transistor. Interestingly, the substrate bias effect depends on the designed geometry of the nanowire: For high width/length ratio nanowires, we show the possibility of turning on both electrons and holes channels. For small width/length ratio nanowires, the only visible channel is that of the holes. Transport modification with the concentration of germanium in the finite nanostructures is also discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8bf78717c6daabac5080014d7a340b36 https://doi.org/10.1149/1.3570791 Zobrazit plný text záznamu