Improved Ohmic Contact Model for Accurate Simulation of GaN-based HEMTs Using Ensemble Monte Carlo Methods

Autor:	K. Sakota, K. Herbert, K. Shibata, M. Kuzuhara, K. Kodama, J. T. Asubar
Rok vydání:	2022
Zdroj:	2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8bf48f92a4596033eafc4b39cace521d https://doi.org/10.1109/imfedk56875.2022.9975422 Zobrazit plný text záznamu