A 3D Stackable DRAM: Capacitor-less Three-Wordline Gate-Controlled Thyristor (GCT) RAM with >40 μ A Current Sensing Window, >1010 Endurance, and 3-second Retention at Room Temperature

Autor:	Wei-Chen Chen, Hang-Ting Lue, Meng-Yan Wu, Teng-Hao Yeh, Pei-Ying Du, Tzu-Hsuan Hsu, Chih-Chang Hsieh, Keh-Chung Wang, Chih-Yuan Lu
Rok vydání:	2022
Zdroj:	2022 International Electron Devices Meeting (IEDM).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8bf43e1acba592a9aba4b0e784feaf95 https://doi.org/10.1109/iedm45625.2022.10019464 Zobrazit plný text záznamu