Electron velocity overshoot in a GaAs‐based p‐i‐n nanostructure semiconductor observed by transient subpicosecond Raman spectroscopy
| Autor: | Hadis Morkoç, Kong-Thon Tsen, A. Botcharev, David K. Ferry, Arnel Salvador, E. D. Grann, Otto F. Sankey |
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| Rok vydání: | 1995 |
| Předmět: |
Drift velocity
Nanostructure Physics and Astronomy (miscellaneous) Condensed matter physics business.industry Chemistry Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Molecular physics Condensed Matter::Materials Science symbols.namesake Semiconductor Velocity overshoot Overshoot (microwave communication) symbols Charge carrier Raman spectroscopy business |
| Zdroj: | Applied Physics Letters. 67:1760-1762 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.115041 |
| Popis: | We report direct measurements of nonequilibrium electron distributions and electron drift velocities in a GaAs‐based p‐i‐n nanostructure semiconductor by using transient subpicosecond Raman spectroscopy. Experimental conditions are such that the velocity overshoot phenomenon dominates the transport properties of the photoexcited carriers. These experimental results are compared with ensemble Monte Carlo calculations. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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