Effect of Step Doping Profile and Dual Material Gate Design on β-Ga2O3 for superior RF Performance

Autor:	Priyanshi Goyal, Harsupreet Kaur
Rok vydání:	2022
Zdroj:	2022 6th International Conference on Devices, Circuits and Systems (ICDCS).
DOI:	10.1109/icdcs54290.2022.9780724
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8bd0ff4ed09441727fe329c0f3c9be78 https://doi.org/10.1109/icdcs54290.2022.9780724 Zobrazit plný text záznamu