Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers
| Autor: | Hiroshi Imanishi, Atushi Koizumi, Kazuo Uchida, Shinji Nozaki, Heisuke Kanaya |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Heterojunction bipolar transistor Superlattice Diffusion Conductivity Condensed Matter Physics Dark field microscopy Inorganic Chemistry Electrical resistivity and conductivity Scanning transmission electron microscopy Materials Chemistry Optoelectronics business Layer (electronics) |
| Zdroj: | Journal of Crystal Growth. 370:197-199 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2012.07.022 |
| Popis: | The strained-layer-superlattice (SLS) consisting of undoped InAs and carbon-doped GaAs (GaAs:C) layers were successfully grown on InP substrates by LP-MOVPE. The grown superlattice shows the p-type conductivity with a hole concentration of 1×10 19 cm −3 and Hall mobility of 70 cm 2 V −1 s −1 at room temperature. The resistivity is low enough to be used as an electrically equivalent highly p-type InGaAs base layer of an InP/InGaAs heterojunction bipolar transistor (HBT). The High-Angle Annular Dark Field Scanning Transmission Electron Microscopy (HAADF STEM) images reveal that the InAs/GaAs:C superlattice has an interface more abrupt than the undoped InAs/GaAs superlattice. It is attributed to the suppressed In diffusion from InAs to GaAs due to carbon doping in GaAs. |
| Databáze: | OpenAIRE |
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