An infrared study of H8Si8O12 cluster adsorption on Si(100) surfaces

Autor:	Gwyn P. Williams, Mark M. Banaszak-Holl, Krishnan Raghavachari, Siegfried Mantl, Joseph Eng, E. E. Chaban, Brian E. Bent, Amy M. Michaels, K. Radermacher, F. R. McFeely, Lisa M. Struck, George W. Flynn, S. B. Christman, Yves J. Chabal
Rok vydání:	1998
Předmět:	Adsorption Silicon chemistry Infrared Chemisorption Cluster (physics) Analytical chemistry General Physics and Astronomy Infrared spectroscopy chemistry.chemical_element Density functional theory Physical and Theoretical Chemistry Spectral line
Zdroj:	The Journal of Chemical Physics. 108:8680-8688
ISSN:	1089-7690 0021-9606
DOI:	10.1063/1.476411
Popis:	Motivated by a controversy about the proper interpretation of x-ray photoelectron spectra of Si/SiO2 interfaces derived from the adsorption of H8Si8O12 spherosiloxane clusters on Si(100) surfaces, we have studied the adsorption geometry of the H8Si8O12 clusters on deuterium-passivated and clean Si(100) surfaces by using external reflection infrared spectroscopy. Access to frequencies below 1450 cm−1 was made possible through the use of specially prepared Si(100) samples which have a buried metallic CoSi2 layer that acts as an internal mirror. A comparison of the infrared spectrum of the clusters on a deuterium-passivated Si(100) surface at 130 K with an infrared spectrum of the clusters in a carbon tetrachloride solution reveals that the clusters are only weakly physisorbed on the D/Si(100) surface and also provides evidence for the purity of the cluster source. We also present infrared spectra of clusters directly chemisorbed on a clean Si(100) surface and show evidence that the clusters are adsorbed on ...
Databáze:	OpenAIRE
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