Radiation effects in oxynitrides grown in N/sub 2/O

Autor:	Daniel M. Fleetwood, Nelson S. Saks, R.B. Klein, Patrick M. Lenahan, M. Simons, J. T. Yount
Rok vydání:	1994
Předmět:	Thermal oxidation Nuclear and High Energy Physics Fabrication Materials science Analytical chemistry Trapping Crystal structure Crystallographic defect law.invention Nuclear Energy and Engineering law Radiation damage Irradiation Electrical and Electronic Engineering Electron paramagnetic resonance
Zdroj:	IEEE Transactions on Nuclear Science. 41:1854-1863
ISSN:	1558-1578 0018-9499
DOI:	10.1109/23.340517
Popis:	Oxynitrides have been grown by oxidation in N/sub 2/O in a standard thermal oxidation furnace. Two N/sub 2/O processes have been studied: oxidation in N/sub 2/O only, and two-step oxidation with initial oxidation in O/sub 2/ followed by oxidation/nitridation in N/sub 2/O. Results are presented for radiation damage at 80 and 295 K, hole trapping, interface trap creation, electron spin resonance, and hole de-trapping using thermally-stimulated current analysis. N/sub 2/O oxynitrides do not appear to have the well-known drawbacks of NH/sub 3/-annealed oxynitrides. Creation of interface traps during irradiation is reduced in the N/sub 2/O oxynitrides, with the degree of improvement depending on the fabrication process. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8baecdbc24dcd4481f9994755834c0fe https://doi.org/10.1109/23.340517 Zobrazit plný text záznamu