Increase of Internal Quantum Efficiency due to Carrier Multiplication in Silicon Solar Cells
| Autor: | Hosatte, M., Basta, M., Kuznicki, Z.T. |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: | |
| DOI: | 10.4229/28theupvsec2013-1av.2.14 |
| Popis: | 28th European Photovoltaic Solar Energy Conference and Exhibition; 292-296 Intense research effort is nowadays being deployed towards nanostucturing, due to its potential of significant improvement of PV conversion efficiency. Nanostructures are usually based on chemical composition variations, but they can also be created by sharp interfaces between crystalline and amorphous parts of the same material. Thanks to innovative fabrication techniques, such nanostructures were embedded into all-silicon solar cells whose half of the surface was covered with an electronic surface passivation made of SiO2. Contrary to classical solar cells, the internal quantum efficiency was higher for the parts of the cells remained unprotected from surface recombination. For each test device, the increase reached about 30% for a broad part of the spectrum centered at 500 nm. These experimental results confirmed previous data obtained by comparison of samples. Nanostructured test devices showed a new carrier multiplication mechanism, similar to what is observed in quantum dot solar cells, where the nanostructures modify the physical properties of the material and can enhance Auger generation of carriers. |
| Databáze: | OpenAIRE |
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