An impurity band in Hg3In2Te6 crystals doped with silicon
| Autor: | O. G. Grushka, P. N. Gorlei |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon Condensed matter physics Band gap business.industry Doping chemistry.chemical_element Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Acceptor Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Ionized impurity scattering Condensed Matter::Materials Science Semiconductor chemistry Impurity Condensed Matter::Superconductivity Condensed Matter::Strongly Correlated Electrons business Magnetic impurity |
| Zdroj: | Semiconductors. 37:168-171 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1548659 |
| Popis: | The influence of silicon impurity on the energy-band spectrum in the Hg3In2Te6 semiconductor compound, which incorporated a high concentration of stoichiometric vacancies, was studied on the basis of the results of electrical and optical measurements. It is shown that silicon impurity forms an impurity band of donor states whose density can be approximated by a Gaussian distribution with a peak at Ec-0.29 eV. The emergence of the impurity band is accompanied with the formation of a quasi-continuous spectrum of localized states in the band gap (Eg=0.74 eV); the density of these states is shown to increase as the doping level increases. All states merge into a continuous band if the impurity concentration NSi>4.5×1017 cm−3. Experimental data are explained on the basis of the effect of impurity self-compensation, in which case donor impurity states arise simultaneously with acceptor states of defects. |
| Databáze: | OpenAIRE |
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