High temperature annealing of bent multicrystalline silicon rods
| Autor: | Birgit Ryningen, Maulid Kivambe, Torunn Ervik, Gaute Stokkan, Otto Lohne |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Polymers and Plastics Silicon Annealing (metallurgy) Bent molecular geometry Metals and Alloys Network structure chemistry.chemical_element Rod Electronic Optical and Magnetic Materials Crystallography chemistry Ceramics and Composites Wafer Composite material Deformation (engineering) |
| Zdroj: | Acta Materialia. 60:6762-6769 |
| ISSN: | 1359-6454 |
| DOI: | 10.1016/j.actamat.2012.08.049 |
| Popis: | Dislocation etch-pit structures on multicrystalline silicon rods deformed at 900 °C in four-point bending were studied prior to and after a high-temperature annealing. After deformation, the majority of the dislocation etch-pits were aligned along traces of {1 1 1} planes. Certain localized areas revealed network structures, where etch-pit arrays deviated in the range of 2-10° from the {1 1 1} plane traces. After annealing at 1350 °C for 12 h, a marked change in dislocation density and structure which varied from grain to grain was observed. Some grains showed incomplete polygonized structures, with notable irregularities and Y-junctions. The results were compared with observations on as-cast industrial multicrystalline silicon wafers for solar cells, where similar incomplete polygonized structures can be found. |
| Databáze: | OpenAIRE |
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