Metalorganic vapor phase epitaxy of GaPN alloys assisted by surface nitridation with ammonia

Autor:	Masashi Moriyama, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara, Keisuke Yamane, Kerlee Boualiong
Rok vydání:	2016
Předmět:	Materials science Vapor phase Analytical chemistry Epitaxy Volumetric flow rate Metal Ammonia chemistry.chemical_compound Full width at half maximum chemistry Phase (matter) visual_art visual_art.visual_art_medium Metalorganic vapour phase epitaxy
Zdroj:	2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
Popis:	We report metal organic vapor phase epitaxy (MOVPE) growth of GaPN alloys by surface nitridation with ammonia (NH 3 ). A N composition is controlled up to 1.6 % in the present work by changing nitridation time, NH 3 flow rate, interruption, and growth temperature, while few N incorporation (< 0.1%) was confirmed in a continuous supply method. A typical FWHM value of X-ray rocking curve of the GaPN alloys is comparable to that of GaP substrates, indicating a high crystalline quality.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8b8ec91c328ce78d780b022e747b5446 https://doi.org/10.1109/iciprm.2016.7528600 Zobrazit plný text záznamu