Reliability Evaluation of Manufacturing Processes for Bipolar and MOS Devices on Silicon‐on‐Diamond Materials
Autor: | Bengt Edholm, Anders Söderbärg, Stefan Bengtsson |
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Rok vydání: | 1996 |
Předmět: |
Thermal oxidation
Materials science Silicon Renewable Energy Sustainability and the Environment Annealing (metallurgy) business.industry Electrical engineering Oxide Diamond chemistry.chemical_element Chemical vapor deposition engineering.material Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Silicon nitride Materials Chemistry Electrochemistry engineering Optoelectronics Wafer business |
Zdroj: | Journal of The Electrochemical Society. 143:1326-1334 |
ISSN: | 1945-7111 0013-4651 |
DOI: | 10.1149/1.1836638 |
Popis: | The chemical stability of polycrystalline diamond subjected to common silicon device integrated circuit process steps has been investigated using Raman spectroscopy, scanning electron microscopy, I‐V, and capacitance‐voltage. Wet chemical process steps such as RCA cleaning, KOH etching, and aluminum etching were performed without significant degradation of the diamond. No contamination, as judged from electrical data, of reference metal oxide semiconductor capacitors from the diamond was seen during furnace treatments. Diamond was found to withstand annealing at 950°C without electrical degradation. Patterning of diamond was demonstrated and utilized in manufacturing of test structures. Methods have been found to protect the diamond at temperatures up to 1100°C during thermal oxidation of adjacent silicon. Capping layers consisting of silicon nitride, silicon nitride on top of chemically vapor deposited oxide and polysilicon were found to protect diamond during thermal oxidation. A silicon‐on‐diamond wafer process based on process steps investigated in this paper is proposed. |
Databáze: | OpenAIRE |
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