| Autor: |
郭春生 Guo Chun-sheng, 周舟 Zhou Zhou, 张光沉 Zhang Guang-chen, 冯士维 Feng Shi-wei, 李静婉 Li Jing-wan |
| Rok vydání: |
2011 |
| Předmět: |
|
| Zdroj: |
Chinese Journal of Luminescence. 32:1046-1050 |
| ISSN: |
1000-7032 |
| DOI: |
10.3788/fgxb20113210.1046 |
| Popis: |
Accelerated aging test at the temperature of 85 ℃ were carried out on high-power GaN-based white light-emitting diodes.The degradation of main performance parameters was investigated.After 6 500 h,the luminous flux rate of the samples was declined about 28% to 33%.Series resistance and reverse leakage current increased with the aging time,which were caused by the degradation of ohmic contact and the increase of the defect density,respectively.The thermal resistance components of LEDs increased gradually.Based on the C-SAM measurement,some voids appeared in the die attach.The experiment results suggested that the degradation both in chip and packaging lead to the invalidation devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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