Analysis of Slip Behavior in a Single Shear Lap Lead-Free Solder Joint During Simple Shear at 25°C and 0.1/s
Autor: | Thomas R. Bieler, Adwait U. Telang |
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Rok vydání: | 2009 |
Předmět: |
Materials science
Deformation (mechanics) Slip (materials science) Plasticity Condensed Matter Physics Electronic Optical and Magnetic Materials Simple shear Lap joint Shear (geology) Critical resolved shear stress Materials Chemistry Electrical and Electronic Engineering Composite material Slip line field |
Zdroj: | Journal of Electronic Materials. 38:2694-2701 |
ISSN: | 1543-186X 0361-5235 |
DOI: | 10.1007/s11664-009-0909-x |
Popis: | The relative activity of the potential slip systems in Sn is examined by comparing an experiment of a single shear lap deformation with simulations using the viscoplastic self-consistent crystal plasticity model developed by Lebensohn and Tome. In a single shear lap specimen made using eutectic Sn-Ag solder on copper pull tabs, the initially polished side was characterized using orientation mapping before and after 0.8 shear deformation at 25°C at a shear strain rate of 0.1/s. The critical resolved shear stress of potential slip systems and the rate sensitivity was altered by trial and error until good agreement between experimentally observed and computed texture was obtained. This result indicated that slip on {101) and {211) planes is much more difficult to activate than on other slip systems for the grain orientations present in this sample. This particular sample showed much activity on the {010)〈101] slip system, but the activation of this slip system may be related to the initial dominant orientation in the specimen. This result is compared with literature and related experiments on ball grid arrays in a companion paper in this volume that show similar trends. As lead-free solder joints are commonly single crystals or multicrystals, this particular result is not indicative of lead-free solder joints as a whole, but must be interpreted in the context of a larger data set. |
Databáze: | OpenAIRE |
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