| Autor: |
Tomonori Hino, S. Taniguchi, C. Jordan, D. T. Fewer, Petteri Uusimaa, Eithne M. McCabe, Markus Pessa, Kazushi Nakano, John F. Donegan, Akira Ishibashi |
| Rok vydání: |
1999 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.347591 |
| Popis: |
Confocal photoluminescence imaging is an important tool in the investigation of recombination in semiconductors and in the characterization of material growth. This characterization is particularly important for II-VI wide band-gap semiconductors where the potential for blue-green lasers is being explored currently. To achieve room-temperature cw operation of these lasers over the multi-thousand hours necessary for commercialization, extremely low defect densities are required. The confocal microscope is used in this work to image photoluminescence from II-VI materials to characterize the defect formation and propagation within the quantum well region of the material. This imaging approach permits the degradation to be monitored in real time and over a large area in samples with low defect densities. The additional advantages of this set-up over a conventional microscope are, of course, the higher lateral resolution and narrow depth of field associated with a confocal microscope. While considerable effort has been focused on the degradation in these II-VI semiconductors, we have recently observed that annealing can occur simultaneously in the same sample when the material is exposed to intense optical excitation. Images of annealing and degradation of a range of II-VI samples will be presented to highlight these observations.© (1999) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
