Investigations of structure and morphology of the AlN nano-pillar crystal films prepared by halide chemical vapor deposition under atmospheric pressure

Autor:	Yoriko Matsumoto, Naoyuki Takahashi, Takato Nakamura
Rok vydání:	2006
Předmět:	Materials science Atmospheric pressure Scanning electron microscope Analytical chemistry General Chemistry Chemical vapor deposition Substrate (electronics) Nitride Condensed Matter Physics Crystal Crystallography Electron diffraction General Materials Science Selected area diffraction
Zdroj:	Journal of Physics and Chemistry of Solids. 67:665-668
ISSN:	0022-3697
Popis:	Aluminum nitride (AlN) prepared under atmospheric pressure using a halide chemical vapor deposition method has been examined by means of a variety of analytical techniques. Scanning electron microscopic observations showed that the crystals deposited onto a Si(100) substrate have hexagonal pillar structure. Based on the X-ray diffraction and X-ray pole-figure analyses, it was deduced that the each AlN pillar crystal grows with a different rotation angle around the 〈001〉 axis. Transmission electron diffraction showed that they are of single-like form. This was also confirmed by the selected area electron diffraction image as well. It was found that the diameter of pillar which constitutes an AlN film was significantly dependent upon the ratio of NH3/AlCl3 used as source materials and the growth temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8b709edf4b474e690af94b1ca0523d64 https://doi.org/10.1016/j.jpcs.2005.10.179 Zobrazit plný text záznamu Full Text from ScienceDirect