Corona assisted gallium oxide nanowire growth on silicon carbide
| Autor: | Peter Schaaf, Shantonu Biswas, Nishchay A. Isaac, Jonas Breiling, Leslie Schlag, Johannes Reiprich, Thomas Stauden, Heiko O. Jacobs, Thomas Kups, Jörg Pezoldt |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Silicon Nucleation Nanowire chemistry.chemical_element 02 engineering and technology Crystal structure 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Catalysis Inorganic Chemistry chemistry.chemical_compound chemistry Chemical engineering 0103 physical sciences Materials Chemistry Sapphire Silicon carbide 0210 nano-technology Corona discharge |
| Zdroj: | Journal of Crystal Growth. 509:107-111 |
| ISSN: | 0022-0248 |
| Popis: | This article reports on the use of corona discharge to assist the vapor liquid solid growth of gallium oxide nanowires on silicon carbide substrates. The corona discharge increases the nucleation efficiency of the gold catalysts from 60% to 98% for 3C-SiC(1 1 1)/Si(1 1 1) Si-face substrates and from 15% to 80% for 6H-SiC(0001) substrates. The growth mode and crystal structure are not affected by the corona discharge. The gallium oxide growth starts with the formation of [ −3 1 1] oriented laterally overgrown terrace like nucleation zones with the gold catalyst particles floating on top. With evolving process time, the growth proceeds in the faster [0 1 0] direction, resulting in nanowires with an inclination angle of 51° towards the substrate surface. On silicon and sapphire substrates, the nucleation and growth of gallium oxide nanowires are suppressed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect