Evaluation of local vibrational mode absorption caused by carbon in GaAs

Autor: R. L. Henry, R. J. Gorman, P. E. R. Nordquist, J. S. Blakemore, S. B. Saban
Rok vydání: 1992
Předmět:
Zdroj: Journal of Applied Physics. 72:2505-2507
ISSN: 1089-7550
0021-8979
DOI: 10.1063/1.351543
Popis: Room temperature measurements are reported of the mid‐infrared local vibrational mode (LVM) absorption caused by CAs acceptors in GaAs. A 30:1 range of carbon content was found among a group of 33 samples of melt‐grown semi‐insulating GaAs. The LVM absorption band area is compared with the dip ΔT this band makes in a transmittance spectral trace. The ratio (ΔT/t) of transmittance dip to sample thickness shows a useful correlation with the integrated LVM band area.
Databáze: OpenAIRE