Evaluation of local vibrational mode absorption caused by carbon in GaAs
Autor: | R. L. Henry, R. J. Gorman, P. E. R. Nordquist, J. S. Blakemore, S. B. Saban |
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Rok vydání: | 1992 |
Předmět: | |
Zdroj: | Journal of Applied Physics. 72:2505-2507 |
ISSN: | 1089-7550 0021-8979 |
DOI: | 10.1063/1.351543 |
Popis: | Room temperature measurements are reported of the mid‐infrared local vibrational mode (LVM) absorption caused by CAs acceptors in GaAs. A 30:1 range of carbon content was found among a group of 33 samples of melt‐grown semi‐insulating GaAs. The LVM absorption band area is compared with the dip ΔT this band makes in a transmittance spectral trace. The ratio (ΔT/t) of transmittance dip to sample thickness shows a useful correlation with the integrated LVM band area. |
Databáze: | OpenAIRE |
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