Impact of germanium nano layer on the CZTSe absorber layer properties

Autor:	Vishvas Kumar, Nandu B. Chaure, Srinibasa Padhy, Udai P. Singh
Rok vydání:	2022
Předmět:	Materials science business.industry Mechanical Engineering Doping Thin layer chemistry.chemical_element Germanium Condensed Matter Physics chemistry Stack (abstract data type) Mechanics of Materials Nano Optoelectronics General Materials Science business Layer (electronics)
Zdroj:	Materials Science in Semiconductor Processing. 138:106276
ISSN:	1369-8001
DOI:	10.1016/j.mssp.2021.106276
Popis:	In the present work, in order to study the effect of Germanium (Ge) thin layer incorporation on the CZTSe films, the Ge thin layer was deposited on the backside of the CZTSe as well as in between the CZTSe. The films were prepared with the help of thermal evaporation technique in stack format using all the constituents. Subsequently, the films were subjected to selenization process in order to obtain the Germanium doped CZTSe films. The properties such as structural, morphological, optical and electrical of the undoped CZTSe and Ge doped CZTSe absorber layer with change in Ge thin layer incorporation position was investigated. The major peak of the CZTSe film is shifted towards right due to change in position of Ge thin layer in CZTSe. It was noticed that the position of Ge thin layer affects the properties of CZTSe film.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8b577a39032844258f086c2ac1103022 https://doi.org/10.1016/j.mssp.2021.106276 Zobrazit plný text záznamu Full Text from ScienceDirect