Spatially-resolved photoluminescence studies of V-shaped pits on Al0.16Ga0.84N

Autor:	C. S. Ku, H. Y. Lee, Wei-Kuo Chen, Hsiang-Jen Huang, Wei Hsin Chen, Wen-Cheng Ke, N. E. Tang, J. M. Peng, Ming Chih Lee
Rok vydání:	2004
Předmět:	Semiconductor thin films Photoluminescence Materials science Optics business.industry Atomic force microscopy Spatially resolved Energy diagram Wide-bandgap semiconductor General Physics and Astronomy Optoelectronics business Electrical conductor
Zdroj:	Journal of Applied Physics. 95:2172-2174
ISSN:	1089-7550 0021-8979
Popis:	We have studied optical properties of V-shaped pits on Al0.16Ga0.84N. The microphotoluminescence spectrum from the pit center shows a broader and stronger emission at 350 nm than the near-band-edge emission at 336 nm from nonpit regions. The results indicated specific defect levels associated with the V-shaped pits. Furthermore, after using atomic force microscopy to probe the surface electrical potential with a conductive tip, the pit’s potential was ∼0.2 V lower than its surrounding region. A simplified energy diagram is tentatively proposed to interpret our observation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8b50b52bcb4c71532b1c93cf212200c6 https://doi.org/10.1063/1.1637952 Zobrazit plný text záznamu