Effect of plastic deformation on electronic properties of GaAs

Autor:	M. Milshtein, C. H. Kang, Harry C. Gatos, F. P. Dabkowski, Marek Skowronski, A. M. Hennel, Jacek Lagowski
Rok vydání:	1987
Předmět:	Electron mobility Condensed matter physics Annealing (metallurgy) Chemistry Analytical chemistry General Physics and Astronomy Acceptor law.invention law Impurity Ionization Deformation (engineering) Dislocation Electron paramagnetic resonance
Zdroj:	Journal of Applied Physics. 62:3791-3798
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.339218
Popis:	A systematic study of plastically deformed (in compression) GaAs was carried out employing deep‐level spectroscopies, optical absorption, and electronic transport measurements. Deformation‐induced changes in the free‐carrier concentration, the mobility, and occupation of deep levels were associated with a deep acceptor defect. Changes of the optical absorption in deformed samples were found to be due to a localized stress field of dislocations rather than transitions via localized levels. No evidence was found of any meaningful increase (>2×1015 cm−3) of the concentration of EL2 or other midgap donors for deformation up to about 3%. Thus, it is evident that the enhancement of the electron paramagnetic resonance signal of the arsenic antisite AsGa in deformed semi‐insulating GaAs must be due to the increased ionization of AsGa rather than the generation of new antisite defects.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8b4e11f12deaf0a8b9c83a99282cc670 https://doi.org/10.1063/1.339218 Zobrazit plný text záznamu