Strongly Modulated Conductivity in Ag/PLZT/LSCO Field-Effect Transistor
| Autor: | D. V. Mashovets, I. V. Grekhov, I. Liniichuk, I. Veselovsky, L. A. Delimova |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
business.industry Transistor Field effect Conductance Conductivity Condensed Matter Physics Ferroelectricity Electronic Optical and Magnetic Materials law.invention Non-volatile memory Control and Systems Engineering law Electric field Materials Chemistry Ceramics and Composites Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | Integrated Ferroelectrics. 43:101-113 |
| ISSN: | 1607-8489 1058-4587 |
| DOI: | 10.1080/10584580212361 |
| Popis: | A possibility of deep (>70%) modulation of La 1.94 Sr 0.06 CuO 4 and La 1.85 Sr 0.15 CuO 4 channel conductance has been shown in all-perovskite field effect transistor with a (Pb 0.95 La 0.05 )(Zr 0.2 Ti 0.8 )O 3 ferroelectric as a gate insulator. Relatively low carrier density (∼10 18 m 10 19 cm m 3 ), small thickness, and rather high surface quality of the channel have provided the penetration of the electric field into the major part of the channel and deep conductance modulation, sufficient, in principle, for operation of a nonvolatile memory cell with a nondestructive readout of information. |
| Databáze: | OpenAIRE |
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