| Autor: |
Lequn Liu, Yongjun Jeff Hu, Ceredig Roberts, Allen McTeer, Shu Qin, Stephen W. Russell, Jixin Yu, Gordon Haller |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
2014 International Workshop on Junction Technology (IWJT). |
| DOI: |
10.1109/iwjt.2014.6842056 |
| Popis: |
Toppling during clean process is a general structure issue when we scale down critical dimension (CD)/increase aspect ratio (AR) and density of the nano structures. In this paper, we demonstrated a novel process with CH 4 PLAD (plasma doping) conformal process to eliminate the toppling issue. A uniform C deposition layer from CH 4 PLAD process wrapped the whole structure on the top/bottom/sidewall and made structure more robust during clean process. As a result, the toppling issue could be eliminated. The PLAD condition should be chosen in the “highly collisional case” in order to maximize deposition and minimize implant. ARXPS (angle resolved X-ray photoelectron spectroscopy) and PDP1 (plasma device planar 1D) simulation were applied to define the “highly collisional case”. There was a strong correlation between implant dose and toppling reduction rate. Besides CH 4 PLAD, other neutral species such as GeH 4 PLAD may also be used for this process. The advantages of this process include no thermal Dt, fast throughput and low cost. It may help us to continue scaling down the structures with higher AR/smaller CD/higher density. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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