Autor: |
Kangsa Pak, Yukichi Takamatsu, Takashi Yoshimura, Naoki Ohshima, Atsushi Ichige, Hiroo Yonezu, Shuichi Nishide |
Rok vydání: |
1998 |
Předmět: |
|
Zdroj: |
Journal of Crystal Growth. :325-329 |
ISSN: |
0022-0248 |
DOI: |
10.1016/s0022-0248(98)00279-6 |
Popis: |
Tertiarybutylhydrazine (TBHy) is one of the alternative nitrogen sources to ammonia. We investigated pyrolysis of TBHy using quadrupole mass spectrometer and grew GaN films on (0 0 0 1) sapphire substrates by low-pressure metal-organic vapor-phase epitaxy. TBHy drastically began to decompose from ∼400°C and was totally decomposed at ∼800°C. Single-crystalline layers of GaN with good surface morphology were obtained at the growth temperature of ∼930°C. The decomposition of the C4H9NH component from TBHy might be a dominant process for the film growth at relatively higher temperature. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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