Study of the pyrolysis of tertiarybutylhydrazine and GaN film growth

Autor: Kangsa Pak, Yukichi Takamatsu, Takashi Yoshimura, Naoki Ohshima, Atsushi Ichige, Hiroo Yonezu, Shuichi Nishide
Rok vydání: 1998
Předmět:
Zdroj: Journal of Crystal Growth. :325-329
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(98)00279-6
Popis: Tertiarybutylhydrazine (TBHy) is one of the alternative nitrogen sources to ammonia. We investigated pyrolysis of TBHy using quadrupole mass spectrometer and grew GaN films on (0 0 0 1) sapphire substrates by low-pressure metal-organic vapor-phase epitaxy. TBHy drastically began to decompose from ∼400°C and was totally decomposed at ∼800°C. Single-crystalline layers of GaN with good surface morphology were obtained at the growth temperature of ∼930°C. The decomposition of the C4H9NH component from TBHy might be a dominant process for the film growth at relatively higher temperature.
Databáze: OpenAIRE