Investigation of deep states in thin films of hydrogenated amorphous silicon by photo-induced current transient spectroscopy
| Autor: | M. Tapiero, J. P. Zielinger, N. Benjelloun-Saki, J. Herion, W. Beyer |
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| Rok vydání: | 1989 |
| Předmět: |
Amorphous silicon
Materials science Clinical Biochemistry Theoretical models General Medicine Molecular physics Analytical Chemistry chemistry.chemical_compound chemistry Density of states General Materials Science Transient (oscillation) Current (fluid) Thin film Transient spectroscopy Recombination |
| Zdroj: | Fresenius' Zeitschrift für analytische Chemie. 333:531-534 |
| ISSN: | 0016-1152 |
| Popis: | Photo-induced current transient spectroscopy (PICTS) was performed for thin films of undoped hydrogenated amorphous silicon (a-Si∶H). Existing theoretical models i.e. the standard model of PICTS (the transient currents are limited by thermal emission of carriers from localized to mobile states) and the recombination model due to Rose (the transient currents are limited by recombination) fail to describe the experimental data. It is concluded that the recombination model has to be extended to arbitrary distributions of the density of states in order to be applicable to the present case. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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