| Autor: |
Zs. Zolnai, Janos Szivos, J. Byrnes, O. Sepsi, F. Ujhelyi, Leonard M. Rubin, a. Kun, Anita Pongracz, Edward D. Moore, Gy. Nadudvari |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). |
| DOI: |
10.1109/asmc49169.2020.9185326 |
| Popis: |
Photo-modulated reflectance measurements provide a powerful, non-contact, non-destructive and inline-compatible method with low-cost operation for statistical process control of ion implantation steps on monitor and on product wafers. We present case studies describing how photo-modulated reflectivity measurements (PMR) can be used for ion implantation dose, fluence and tilt angle monitoring with excellent resolution, even for low-energy ion implantation processes. This is important because precise dopant and damage profile control is crucial in state-of-the art semiconductor processes utilizing shallow junctions and complex 3D doping profiles. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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