Fabrication of air gap dielectrics by nanoimprint lithography

Autor: Burcin Erenturk, Kenneth R. Carter, Vincent M. Rotello, Myoung-Hwan Park
Rok vydání: 2012
Předmět:
Zdroj: Microelectronic Engineering. 98:89-96
ISSN: 0167-9317
DOI: 10.1016/j.mee.2012.03.006
Popis: Graphical abstractDisplay Omitted Highlights? We report a powerful new route to fabricate air gap dielectrics with well-defined pore geometries. ? Method utilizes the combination of nanoimprint lithography and a sacrificial template approach. ? Successful fabrication of defect free mechanically robust air gap films (ultra-low k value of 1.9). ? Attractive candidates as interlayer dielectrics for next-generation integrated circuit applications. We report a simple and high-resolution method to fabricate air gap dielectrics with well-defined geometries. This method utilizes nanoimprint lithography to pattern a thermally labile organic polymer, poly (2-hydroxyethyl methacrylate) (PHEMA), subsequently used as a sacrificial template to form air gap nanochannels in a low-k spin-on-glass, poly(methylsilsesquioxane) (PMSSQ). The morphology and dimensions of obtained structures were characterized by cross-sectional SEM, revealing well-defined, continuous and uniform nanochannels. Dielectric constant measurements showed that introduction of these air gap nanochannels into the PMSSQ layer decreased the dielectric constant value from 2.8 to 1.9, while nanoindentation experiments confirmed that the nanochannels were mechanically robust as the air gap films retained the hardness of 1GPa. Infusion with a fluorescent dye solution and subsequent quenching with gold nanoparticles demonstrated continuous nature and uniform distribution of the nanochannels throughout the sample.
Databáze: OpenAIRE