| Autor: |
R Nagarajan, James W Pomeroy, F Baig, E. A. Payzant, J. Chaudhuri, Zhou Xu, James H. Edgar, Martin Kuball, Z. U. Rek, Harry M. Meyer |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
Journal of Crystal Growth. 273:431-438 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/j.jcrysgro.2004.07.068 |
| Popis: |
The growth of B 12 As 2 by chemical vapor deposition on 6H–SiC substrates using hydrides B 2 H 6 and AsH 3 as the reactants is described. The growth rate increased from 1.5 μm/h at 1100 °C to a maximum of 5 μm/h at 1400 °C, and decreased at higher temperatures. X-ray diffraction indicates that the deposits were amorphous when the deposition temperature was below 1150 °C. Strongly c -axis oriented crystalline B 12 As 2 films were obtained at temperatures higher than 1150 °C. The orientation relationship of the B 12 As 2 on 6H–SiC was ( 0 0 0 1 ) 〈 1 0 1 ¯ 0 〉 | | ( 0 0 0 1 ) 〈 1 1 2 ¯ 0 〉 . The surface morphology of the B 12 As 2 film grown at 1150 °C consisted of isolated triangular crystallites. A continuous film forms as the growth temperature is progressively increased up to 1450 °C. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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